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Other articles related with "Si substrate"：
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28101 |
Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺) |
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Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si |
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Chin. Phys. B
2023 Vol.32 (2): 28101-028101
[Abstract]
(254)
[HTML 1 KB]
[PDF 1419 KB]
(115)
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88101 |
Wang Zhang(张望), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Qi-Feng Lv(吕奇峰), Xiang-Hai Ji(季祥海), Tao Yang(杨涛), Fu-Hua Yang(杨富华) |
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Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate |
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Chin. Phys. B
2017 Vol.26 (8): 88101-088101
[Abstract]
(582)
[HTML 1 KB]
[PDF 1726 KB]
(191)
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77801 |
Yu Lei (于磊), Zhang Yuan-Wen (张苑文), Li Kai (李凯), Pi Hui (皮辉), Diao Jia-Sheng (刁家声), Wang Xing-Fu (王幸福), Hu Wen-Xiao (胡文晓), Zhang Chong-Zhen (张崇臻), Song Wei-Dong (宋伟东), Shen Yue (沈岳), Li Shu-Ti (李述体) |
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Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates |
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Chin. Phys. B
2015 Vol.24 (7): 77801-077801
[Abstract]
(592)
[HTML 1 KB]
[PDF 512 KB]
(246)
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38503 |
Liu Ming-Gang (柳铭岗), Wang Yun-Qian (王云茜), Yang Yi-Bin (杨亿斌), Lin Xiu-Qi (林秀其), Xiang Peng (向鹏), Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Zang Wen-Jie (臧文杰), Liao Qiang (廖强), Lin Jia-Li (林佳利), Luo Hui (罗慧), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君) |
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Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes |
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Chin. Phys. B
2015 Vol.24 (3): 38503-038503
[Abstract]
(634)
[HTML 0 KB]
[PDF 839 KB]
(597)
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87203 |
Chen Yi-Xin(陈依新), Shen Guang-Di(沈光地), Guo Wei-Ling(郭伟玲), and Gao Zhi-Yuan(高志远) |
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AlGaInP–Si glue bonded high performance light emitting diodes |
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Chin. Phys. B
2011 Vol.20 (8): 87203-087203
[Abstract]
(1466)
[HTML 0 KB]
[PDF 726 KB]
(1314)
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1467 |
Liu Zhe(刘喆), Wang Xiao-Liang(王晓亮), Wang Jun-Xi(王军喜), Hu Guo-Xin(胡国新), Guo Lun-Chun(郭伦春), and Li Jin-Min(李晋闽) |
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The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates |
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Chin. Phys. B
2007 Vol.16 (5): 1467-1471
[Abstract]
(1307)
[HTML 0 KB]
[PDF 947 KB]
(1233)
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